Comparative study of symmetrical OTA performance in 180 nm, 130 nm and 90 nm CMOS technology
نویسندگان
چکیده
منابع مشابه
Synthesis in 90-nm CMOS
We propose and demonstrate a 20-ps time-to-digital converter (TDC) realized in 90-nm digital CMOS. It is used as a phase/frequency detector and charge pump replacement in an all-digital phase-locked loop for a fully-compliant Global System for Mobile Communications (GSM) transceiver. The TDC core is based on a pseudodifferential digital architecture that makes it insensitive to nMOS and pMOS tr...
متن کاملDesign of Two Stage Ultra Low Power CMOS Operational Transconductance Amplifier (OTA) Using 180 nm Technology
This paper deals with well-defined design criteria for ultra low power two stage CMOS operational transconductance amplifiers (OTAs) with simple yet robust implementation in nm dimension. A simple design approach which allows electrical parameters to be univocally related to each circuit element and biasing values for low frequency applications is presented.The operational transconductance ampl...
متن کاملScaling equations for the accurate prediction of CMOS device performance from 180 nm to 7 nm
Classical scaling equations which estimate parameters such as circuit delay and energy per operation across technology generations have been extremely useful for predicting performance metrics as well as for comparing designs across fabrication technologies. Unfortunately in the CMOS deep-submicron era, the classical scaling equations are becoming increasingly less accurate and new practical sc...
متن کاملLow-noise Design Issues for Analog Front-end Electronics in 130 nm and 90 nm CMOS Technologies
Deep sub-micron CMOS technologies provide wellestablished solutions to the implementation of low-noise front-end electronics in various detector applications. The IC designers’ effort is presently shifting to 130 nm CMOS technologies, or even to the next technology node, to implement readout integrated circuits for silicon strip and pixel detectors, in view of future HEP applications. In this w...
متن کاملToward More Accurate Scaling Estimates of CMOS Circuits from 180 nm to 22 nm
With deep submicron technology nodes other methods are needed to obtain scaling factors rather than the traditional scaling factors which held for the pre-submicron era. This work presents scaling factors between major technology nodes between 180 nm and 22 nm operating at voltages from 1.8 V to 0.7 V. Common operating data for these technologies were taken from the International Technology Roa...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Indonesian Journal of Electrical Engineering and Computer Science
سال: 2019
ISSN: 2502-4760,2502-4752
DOI: 10.11591/ijeecs.v14.i1.pp230-240